SEMICOSIL® TEOS 999-LB
SEMICOSIL® TEOS 999-LB
- CAS编号 78-10-4
- 实验式 C8H20O4Si
- 分子量 208,3
特性
- Ultra high chemical purity
- Excellent trace metal purity
- Very good Boron purity
- Very good chloride purity
SEMICOSIL® TEOS 999 LB was developed for the Semiconductor Industry. A typical application is the use as precursor for low dielectric constant interlayer dielectrics.
储存
The 'Best use before end' date of each batch is shown on the product label.
Storage beyond the date specified on the label does not necessarily mean that the product is no longer usable. In this case however, the properties required for the intended use must be checked for quality assurance reasons.
销售和支持
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